Issue 47, 2020
From the journal:

Chemical Communications

Effect of functional groups on microporous polymer based resistance switching memory devices†

Yaru Song,‡ab   Jie Liu,‡ab   Wanhui Li,ab   Lei Liu,ab   Ling Yang,c   Shengbin Lei ORCID logo *ab  and  Wenping Hu ORCID logo a  

* Corresponding authors

a Tianjin Key Laboratory of Molecular Optoelectronic Science, Tianjin University, Tianjin 300072, P. R. China
E-mail: shengbin.lei@tju.edu.cn

b Department of Chemistry, School of Science & Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), Tianjin University, Tianjin 300072, P. R. China

c School of Chemistry and Chemical Engineering, Harbin Institute of Technology, Harbin 150080, People's Republic of China

Abstract

Here, two large-area microporous polymer (MP) films with different substituents were synthesized at the solution/air interface. The on/off ratios of the MP-based memristors differ by an order of magnitude and the turn-on voltages differ by about 0.2 V, which is mainly attributed to the difference in band gap and pore environment of the materials.

Graphical abstract: Effect of functional groups on microporous polymer based resistance switching memory devices

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Article information

DOI
https://doi.org/10.1039/D0CC01397H
Article type
Communication
Submitted
24 Feb 2020
Accepted
23 Apr 2020
First published
25 Apr 2020

Chem. Commun., 2020,56, 6356-6359

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Effect of functional groups on microporous polymer based resistance switching memory devices

Y. Song, J. Liu, W. Li, L. Liu, L. Yang, S. Lei and W. Hu, Chem. Commun., 2020, 56, 6356 DOI: 10.1039/D0CC01397H

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