Intrinsic ferromagnetic semiconductivity realized in a new MoS2 monolayer

Abstract

Magnetic semiconductors, with semiconductivity and ferromagnetism simultaneously, have promising important applications as storage devices. However, the ordered ferromagnetic state easily suffers from enhanced thermal fluctuation, inducing a very small Curie temperature. Here we have successfully predicted a new 2D small-gap MoS₂ magnetic semiconductor. Instead, almost all of the reported MoS₂ phase was nonmagnetic whether it exhibited semiconducting or metal behavior. Monte Carlo simulations showed that its Curie temperature could approach 130 K and could be further enhanced through applying biaxial tensile strain. The revealed atomic bonding pattern paves a new way to explore novel electronic and magnetic materials.