Issue 22, 2020

Enhancement of critical current density in a superconducting NbSe2 step junction

Abstract

We investigate the transport properties of a NbSe2 nanodevice consisting of a thin region, a thick region and a step junction. The superconducting critical current density of each region of the nanodevice has been studied as a function of temperature and magnetic field. We find that the critical current density has similar values for both the thin and thick regions away from the junction, while the critical current density of the thin region of the junction increases to approximately 1.8 times as compared with the values obtained for the other regions. We attribute such an enhancement of critical current density to the vortex pinning at the surface step. Our study verifies the enhancement of the critical current density by the geometrical-type pinning and sheds light on the application of 2D superconductors.

Graphical abstract: Enhancement of critical current density in a superconducting NbSe2 step junction

Supplementary files

Article information

Article type
Paper
Submitted
20 May 2020
Accepted
25 May 2020
First published
25 May 2020

Nanoscale, 2020,12, 12076-12082

Enhancement of critical current density in a superconducting NbSe2 step junction

X. He, Y. Wen, C. Zhang, Z. Lai, E. M. Chudnovsky and X. Zhang, Nanoscale, 2020, 12, 12076 DOI: 10.1039/D0NR03902K

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