Issue 27, 2020, Issue in Progress

A high-throughput synthesis of large-sized single-crystal hexagonal boron nitride on a Cu–Ni gradient enclosure

Abstract

Large monolayer two-dimensional h-BN can be employed in novel electronic devices because of its thin insulation, excellent thermal stability, and high mechanical strength. However, the efficient synthesis of an h-BN film with large lateral size still faces a great challenge. Here, we report a method for the high-throughput synthesis of large-sized single-crystal h-BN on a Cu–Ni gradient alloy enclosure as the substrate via a low-pressure chemical vapor deposition (LPCVD) method. By depositing Ni on the Cu foil in different concentrations to obtain a Cu–Ni in-plane gradient concentration alloy enclosure, the highest growth rate of h-BN was 1 μm min−1 with the lateral size of h-BN being higher than 60 μm. Furthermore, the effect of the Ni content on the single crystal h-BN grain size and nucleation density and the mechanisms for the growth of h-BN were also investigated.

Graphical abstract: A high-throughput synthesis of large-sized single-crystal hexagonal boron nitride on a Cu–Ni gradient enclosure

Article information

Article type
Paper
Submitted
23 Jan 2020
Accepted
01 Apr 2020
First published
23 Apr 2020
This article is Open Access
Creative Commons BY-NC license

RSC Adv., 2020,10, 16088-16093

A high-throughput synthesis of large-sized single-crystal hexagonal boron nitride on a Cu–Ni gradient enclosure

T. Zhu, Y. Liang, C. Zhang, Z. Wang, M. Dong, C. Wang, M. Yang, T. Goto, R. Tu and S. Zhang, RSC Adv., 2020, 10, 16088 DOI: 10.1039/D0RA00734J

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