Recent advances in doping engineering of black phosphorus

Abstract

Black phosphorus (BP), as a typical layered two-dimensional (2D) material, has attracted tremendous attention due to its high carrier mobility, unique in-plane anisotropic structure and tunable direct bandgap. However, its instability due to environmental effects somehow limited its further progress in device applications. Actually, doping engineering has been proven to be an efficient and simple method to improve both the physical and chemical properties of BP, and the performance of BP in both academic and engineering applications. Herein, we review the recent progress of BP doping engineering including substitution doping, intercalation doping, surface charge transfer doping and electrostatic carrier doping. Finally, the challenges and future opportunities for the doping engineering of BP are also provided.