Bulk Pt/CsPbBr3 Schottky junctions for charge boosting in robust triboelectric nanogenerators

Abstract

Triboelectric nanogenerators (TENGs) have attracted growing attention because they are advanced energy conversion devices to efficiently harvest low-frequency mechanical energy from nature. How to increase the permittivity of electrode materials as well as the surface charge density is technically important to improve the output performances of a robust TENG. In this study, an all-inorganic cesium lead bromide (CsPbBr₃) perovskite film with semiconducting characteristics is combined with metallic nano-platinum to build bulk Pt/CsPbBr₃ Schottky junctions, which are used as triboelectric electrode materials in vertical contact-separation perovskite TENGs. The systematic characterization demonstrates that the electron binding energy and dielectric properties of bulk Pt/CsPbBr₃ Schottky junction tailored perovskite films are maximized by optimizing the Pt dosage. An open-circuit voltage of 273 V, a short-circuit current density of 30.3 μA cm⁻² and an instantaneous maximum power density of 1295.5 mW m⁻² are achieved by the champion Pt/CsPbBr₃ TENG at a Pt dosage of 0.5%. A maximum energy storage of 3.96 mJ is stored in a 1 μF capacitor within a 300 s charging period. This work provides new insights into Schottky junction TENGs for enriching the fundamental principles of both halide perovskites and TENGs.