Issue 5, 2020

A simple method for preparing a TiO2-based back-gate controlled N-channel MSM–IGFET UV photodetector

Abstract

Atomic layer deposition (ALD) is used to grow a TiO2 film on a SiO2/Si substrate. A 50 μm N-channel, gate-regulated UV photodetector was fabricated by a simple process of air calcination and mask plating the electrode. The calcination process was found to improve the crystallinity of TiO2, reduce the concentration of the majority of carriers, and increase their mobility (∼0.05 cm2 V−1 s−1). The photoelectric performance of the as-prepared device is improved by about 200 times after calcination under the same test conditions. The as-prepared device has both gate voltage tunable properties of the insulated gate field effect transistor (IGFET) and a high gain (2–3 × 104). At a gate voltage of 8 V and a drain voltage of 3 V, the external quantum efficiency of the device to 0.5 mW cm−2 of 330 nm UV light is ∼2003%. The preparation of such a MSM–IGFET device will be helpful in reducing the device fabrication cost, optimizing the device performance, and promoting the application of photodetection.

Graphical abstract: A simple method for preparing a TiO2-based back-gate controlled N-channel MSM–IGFET UV photodetector

Supplementary files

Article information

Article type
Paper
Submitted
03 Oct 2019
Accepted
10 Dec 2019
First published
10 Dec 2019

J. Mater. Chem. C, 2020,8, 1781-1787

A simple method for preparing a TiO2-based back-gate controlled N-channel MSM–IGFET UV photodetector

T. Ji, Y. Zhang, R. Zou, E. Ha, J. Hu and M. Liao, J. Mater. Chem. C, 2020, 8, 1781 DOI: 10.1039/C9TC05424C

To request permission to reproduce material from this article, please go to the Copyright Clearance Center request page.

If you are an author contributing to an RSC publication, you do not need to request permission provided correct acknowledgement is given.

If you are the author of this article, you do not need to request permission to reproduce figures and diagrams provided correct acknowledgement is given. If you want to reproduce the whole article in a third-party publication (excluding your thesis/dissertation for which permission is not required) please go to the Copyright Clearance Center request page.

Read more about how to correctly acknowledge RSC content.

Social activity

Spotlight

Advertisements