Issue 5, 2021

Realization of high efficiency AlGaN-based multiple quantum wells grown on nano-patterned sapphire substrates

Abstract

Growth of AlGaN-based multiple quantum wells (MQWs) has been attempted on nano-patterned sapphire substrates (NPSSs). By adopting a critical-temperature approach and optimizing the growth conditions including the V/III ratio and Si doping level, high-efficiency AlGaN-based MQWs with an internal quantum efficiency (IQE) greater than 80% at room temperature are realized with an emission wavelength shorter than 280 nm. Taking such high IQE MQWs as the active region, a deep-ultraviolet light-emitting-diode (DUV-LED) device is fabricated and presents single peak emission with a wavelength of 276.1 nm. The light output power (LOP) of this device reaches 17.3 mW at an injection current of 100 mA, presenting an excellent device performance.

Graphical abstract: Realization of high efficiency AlGaN-based multiple quantum wells grown on nano-patterned sapphire substrates

Supplementary files

Article information

Article type
Paper
Submitted
12 Oct 2020
Accepted
01 Dec 2020
First published
08 Dec 2020

CrystEngComm, 2021,23, 1201-1206

Realization of high efficiency AlGaN-based multiple quantum wells grown on nano-patterned sapphire substrates

Y. Sun, F. Xu, N. Zhang, J. Lang, J. Wang, B. Liu, L. Wang, N. Xie, X. Fang, X. Kang, Z. Qin, X. Yang, X. Wang, W. Ge and B. Shen, CrystEngComm, 2021, 23, 1201 DOI: 10.1039/D0CE01491E

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