Optimizing the energy storage properties of antiferroelectric ceramics by modulating the phase structure via constructing a novel binary composite

Abstract

A novel binary composite of (Pb,La)(Zr,Sn)O₃–AgNbO₃ (PLZS–AN) was designed and constructed to optimize the comprehensive energy storage properties. Upon the addition of AN, superior energy storage performance was observed, especially in the actual charge–discharge process. With the addition of 0.01 AN (AN1) (i.e., a PLZS to AN ratio of 0.99 : 0.01), the energy storage efficiency (η) was significantly improved (>85%) accompanied by a slight attenuation in the energy storage density (W_rec) of 10.81 J cm⁻³. AN2 exhibits comprehensively superior energy storage properties (9.36 J cm⁻³, 89.09%) at the same time. Moreover, the actual discharge performance is obviously enhanced, exhibiting a giant current density of 3218.20 A cm⁻² (AN3) and an excellent power density of 556.30 MW cm⁻³ (AN1). The superiority, in terms of the energy storage, of the above-mentioned two compositions originates from the difficultly in inducing FE_II (Cm2m). The addition of AN results in a change in the phase transition temperature of AFE₁(O)–AFE₂(O), thereby modulating the room temperature construction of the phase structure. The as-obtained excellent discharge performances are the highest reported to date, and the proposed binary composite method provides important guidance for the subsequent design of antiferroelectric ceramics with high comprehensive performance.