Issue 8, 2021

Reactions of ruthenium cyclopentadienyl precursor in the metal precursor pulse of Ru atomic layer deposition

Abstract

Ruthenium is a promising material in the semiconductor industry and is investigated as the interconnect metal or as a seed layer for Cu interconnects. Non-oxidative reactants are required in a plasma-enhanced atomic layer deposition (PE-ALD) process for metals to avoid oxygen contamination. The PE-ALD of Ru has been explored experimentally, but the growth mechanism is not clear. In this paper, the reaction mechanism of the cyclopentadienyl (Cp, C5H5) precursor RuCp2 with NHx-terminated Ru surfaces that result from the plasma cycle is studied in detail by first-principle calculations. In this mechanism, Cp ligands are eliminated via hydrogen transfer and desorb from metal surface as CpH. The results show that on the NHx-terminated Ru surface at typical ALD operating temperatures from 550 K to 650 K, Cp ligand elimination for single RuCp2 is overall endothermic. Investigating the precursor coverage, a neighbouring RuCp2 promotes the Cp ligand elimination reaction and the reaction energies for the first hydrogen transfer on (001) and (100) surfaces are negative. The first hydrogen transfer is the rate-limiting step and has high barriers, which are 1.40 eV for Ru(001) and 2.02 eV for Ru(100). The two Cp ligands may be completely eliminated on Ru(100) surface at sufficiently high temperature during the metal precursor pulse, resulting in one Ru atom on the surface. However, at most only one Cp ligand is eliminated on Ru(001) surface, resulting in an RuCp termination on (001) surface. The final surface coverages of final terminations after the metal precursor pulse are 0.85 RuCp per nm2 on the NHx-terminated Ru(001) surface and 1.01 (Ru + RuCp2) per nm2 on the NHx-terminated Ru(100) surface. By contrast, the Cp ligand elimination of CoCp2via hydrogen transfer is overall exothermic and the computed barriers are all moderate in the range of 0.52 eV to 0.85 eV. The orientation of surface NHx species, which is driven by the metal lattice constant and metal–metal spacing, and the intrinsic characteristics of the precursor play an important role in the Cp ligand elimination via hydrogen transfer. These structures are vital to model the following N-plasma step.

Graphical abstract: Reactions of ruthenium cyclopentadienyl precursor in the metal precursor pulse of Ru atomic layer deposition

Supplementary files

Article information

Article type
Paper
Submitted
17 Aug 2020
Accepted
28 Jan 2021
First published
29 Jan 2021

J. Mater. Chem. C, 2021,9, 2919-2932

Reactions of ruthenium cyclopentadienyl precursor in the metal precursor pulse of Ru atomic layer deposition

J. Liu, H. Lu, D. W. Zhang and M. Nolan, J. Mater. Chem. C, 2021, 9, 2919 DOI: 10.1039/D0TC03910A

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