Issue 47, 2021

Predicting intrinsic antiferromagnetic and ferroelastic MnF4 monolayer with controllable magnetization

Abstract

Two-dimensional multiferroic materials with controllable magnetism have promising prospects in miniaturized devices. By performing first-principle calculations, we predict that the MnF4 monolayer is a ferroelastic semiconductor with an energy barrier of ∼160 meV f.u.−1 and a reversible strain of 14.3%. Meanwhile, it is an antiferromagnetic material with an easy-axis along the b-axis and a Néel temperature of 190 K. The magnetic states and easy-axis can be switched by biaxial strain or carrier doping. Therefore, the MnF4 monolayer is a promising material to study magnetic anisotropy and magneto-elastic coupling.

Graphical abstract: Predicting intrinsic antiferromagnetic and ferroelastic MnF4 monolayer with controllable magnetization

Supplementary files

Article information

Article type
Paper
Submitted
01 Oct 2021
Accepted
06 Nov 2021
First published
08 Nov 2021

J. Mater. Chem. C, 2021,9, 17152-17157

Predicting intrinsic antiferromagnetic and ferroelastic MnF4 monolayer with controllable magnetization

S. Xu, F. Jia, X. Cheng and W. Ren, J. Mater. Chem. C, 2021, 9, 17152 DOI: 10.1039/D1TC04705A

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