Correction: Epitaxial growth of β-Ga2O3 (−201) thin film on four-fold symmetry CeO2 (001) substrate for heterogeneous integrations

Xiao Tang; Kuang-Hui Li; Che-Hao Liao; Dongxing Zheng; Chen Liu; Rongyu Lin; Na Xiao; Shibin Krishna; Jose Tauboada; Xiaohang Li

doi:10.1039/D1TC90261J

Correction: Epitaxial growth of β-Ga₂O₃ (−201) thin film on four-fold symmetry CeO₂ (001) substrate for heterogeneous integrations

Xiao Tang,*^a Kuang-Hui Li,^a Che-Hao Liao,^a Dongxing Zheng,^b Chen Liu,^b Rongyu Lin,^a Na Xiao,^a Shibin Krishna,^a Jose Tauboada^a and Xiaohang Li*^a

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* Corresponding authors

^a Advanced Semiconductor Laboratory, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi Arabia
E-mail: xiao.tang@kaust.edu.sa, Xiaohang.li@kaust.edu.sa

^b Division of Physical Science and Engineering (PSE), King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi Arabia

Abstract

Correction for ‘Epitaxial growth of β-Ga₂O₃ (−201) thin film on four-fold symmetry CeO₂ (001) substrate for heterogeneous integrations’ by Xiao Tang et al., J. Mater. Chem. C, 2021, 9, 15868–15876, DOI: 10.1039/D1TC02852A.

Journal of Materials Chemistry C

Correction: Epitaxial growth of β-Ga₂O₃ (−201) thin film on four-fold symmetry CeO₂ (001) substrate for heterogeneous integrations

Abstract

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Correction: Epitaxial growth of β-Ga₂O₃ (−201) thin film on four-fold symmetry CeO₂ (001) substrate for heterogeneous integrations

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