High-temperature ionic logic gates composed of an ionic rectifying solid–electrolyte interface

Abstract

Direct data collection from extremely high temperature environments is vitally important for the progress of industrial technologies such as combustion-engines, turbines and furnaces for various purposes. However, present semiconductor-based information devices are not suitable for such high-temperature applications due to thermal excitation of electronic carriers. Herein, we demonstrate high-temperature ionic AND and OR logic gates composed of the oxide-ion-conducting yttria stabilized zirconia (YSZ) and the mixed oxide-ion and electron conducting La₂NiO_4+δ as an ultra-high temperature information device. The ionic AND and OR gates developed in this work exhibited proper and stable electrical responses at 1073 K. The ionic logic gates shown in this work are promising demonstrations for robust information devices in extreme environments.