Issue 48, 2022, Issue in Progress

Flexible selection of the functional-group ratio on a polytetrafluoroethylene (PTFE) surface using a single-gas plasma treatment

Abstract

During plasma treatment of polymers, etching occurs and functional groups are introduced on their surface. We assumed that controlling the etching rate would enable plasma treatment using a single gas to control the ratio of functional groups generated on a polymer's surface, although previous studies have indicated that several different types of functional groups are formed when the gaseous species are varied. In this study, we selected the base pressure (BP) as a parameter for controlling the etching rate and subjected polytetrafluoroethylene (PTFE) to plasma treatments using only He gas at various BPs. The chemical composition of the surface of the plasma-treated PTFE samples was evaluated by X-ray photoelectron spectroscopy (XPS), and the ratios of fluorine (CF3, CF2, C–F), oxygen (O–C[double bond, length as m-dash]O, C[double bond, length as m-dash]O, C–O), and carbon (C–C, C[double bond, length as m-dash]C) groups were quantified from the C 1s-XPS spectra. The fluorine-group ratio decreased and the oxygen- and carbon-group ratios increased with decreasing BP. The results demonstrated that plasma treatment using a single gas enabled flexible selection of the ratio of functional groups generated on PTFE via control of the BP.

Graphical abstract: Flexible selection of the functional-group ratio on a polytetrafluoroethylene (PTFE) surface using a single-gas plasma treatment

Supplementary files

Article information

Article type
Paper
Submitted
30 Jul 2022
Accepted
21 Oct 2022
First published
01 Nov 2022
This article is Open Access
Creative Commons BY-NC license

RSC Adv., 2022,12, 31246-31254

Flexible selection of the functional-group ratio on a polytetrafluoroethylene (PTFE) surface using a single-gas plasma treatment

Y. Ohkubo, Y. Okazaki, M. Nishino, Y. Seto, K. Endo and K. Yamamura, RSC Adv., 2022, 12, 31246 DOI: 10.1039/D2RA04763B

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