Issue 10, 2022

Realization of the electric-field driven “one-material”-based magnetic tunnel junction using van der Waals antiferromagnetic MnPX3 (X: S, Se)

Abstract

Presently, a lot of efforts are devoted to the investigation of new two-dimensional magnetic materials, which are considered as promising for the realization of future electronic and spintronic devices. However, the utilization of these materials in different junctions requires complicated processing that in many cases leads to unwanted parasitic effects influencing the performance of the junctions. Here, we propose a new elegant approach for the realization of the “one-material”-based magnetic tunnel junction. Several layers of 2D van der Waals MnPX3 (X: S, Se), which are insulating antiferromagnetic in their ground state, are used and the applied external electric field leads to the conversion of the outermost layers of the MnPX3 stack to half-metallic ferromagnetic states. The rich state diagram of such a magnetic tunnel junction allows precise control of its tunneling conductivity. The realized “one-material”-based magnetic tunnel junction allows all effects connected with the lattice mismatch and carrier scattering effects at the material interfaces to be avoided, giving high potential for the application of such systems in electronics and spintronics.

Graphical abstract: Realization of the electric-field driven “one-material”-based magnetic tunnel junction using van der Waals antiferromagnetic MnPX3 (X: S, Se)

Supplementary files

Article information

Article type
Paper
Submitted
10 Dec 2021
Accepted
10 Feb 2022
First published
15 Feb 2022

J. Mater. Chem. C, 2022,10, 3812-3818

Realization of the electric-field driven “one-material”-based magnetic tunnel junction using van der Waals antiferromagnetic MnPX3 (X: S, Se)

Y. Jin, M. Yan, Y. Dedkov and E. Voloshina, J. Mater. Chem. C, 2022, 10, 3812 DOI: 10.1039/D1TC05922J

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