Issue 31, 2022
From the journal:

Journal of Materials Chemistry C

Correction: XSnS3 (X = Ga, In) monolayer semiconductors as photo-catalysts for water splitting: a first principles study

Mosayeb Naseri,*ab   Dennis R. Salahub,a   Tuan V. Vuc  and  Haman Zakaryaed  

* Corresponding authors

a Department of Chemistry, Department of Physics and Astronomy, CMS – Center for Molecular Simulation, IQST – Institute for Quantum Science and Technology, Quantum Alberta, University of Calgary, 2500 University Drive NW, Calgary, Alberta, Canada
E-mail: mosayeb.naseri@ucalgary.ca, dsalahub@ucalgary.ca

b Department of Physics, Kermanshah Branch, Islamic Azad University, Kermanshah, Iran

c Faculty of Mechanical–Electrical and Computer Engineering, School of Engineering and Technology, Van Lang University, Ho Chi Minh City, Vietnam
E-mail: tuan.vu@vlu.edu.vn

d Laboratoire de Physique des Matériaux et Modélisations des Systèmes, (LP2MS), Unité Associée au CNRST-URAC 08, Faculty of Sciences, Department of Physics, Moulay Ismail University, Meknes, Morocco

Abstract

Correction for ‘XSnS3 (X = Ga, In) monolayer semiconductors as photo-catalysts for water splitting: a first principles study’ by Mosayeb Naseri et al., J. Mater. Chem. C, 2022, https://doi.org/10.1039/d2tc01613c.

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Article information

DOI
https://doi.org/10.1039/D2TC90147A
Article type
Correction
Submitted
20 Jul 2022
Accepted
20 Jul 2022
First published
28 Jul 2022
This article is Open Access
Creative Commons BY license

J. Mater. Chem. C, 2022,10, 11424-11424

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Correction: XSnS3 (X = Ga, In) monolayer semiconductors as photo-catalysts for water splitting: a first principles study

M. Naseri, D. R. Salahub, T. V. Vu and H. Zakaryae, J. Mater. Chem. C, 2022, 10, 11424 DOI: 10.1039/D2TC90147A

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