Issue 47, 2023

Preparation of controllable double-selective etched porous substrate for HVPE growth of GaN crystals with excellent optical properties

Abstract

Heteroepitaxial growth of GaN will inevitably generate a large number of defects; serious residual stress will be caused by the mismatch of the lattice and thermal expansion coefficient between the substrate and the GaN material, and eventually the crystal may be broken. We designed a double selective etching method, which can flexibly control the etching rate and degree of GaN substrates. And a hydrothermal etching buffer substrate (hydrothermal MOCVD GaN/Al2O3, HMGA) composed of a porous buffer layer with a weak connection between seed layer and a sapphire substrate was obtained. The 4-inch GaN crystal with excellent optical properties and a thickness of approximately 3 mm was successfully grown on the HMGA substrate. The crystal quality and optical quality of the as-obtained GaN crystal were greatly improved and the residual stress was reduced. At the same time, a metal–semiconductor–metal (MSM) structure ultraviolet (UV) photodetector was made using the as-obtained GaN crystal which showed good photoresponse in the UV band. These prove that the double selective etching technology has broad application prospects in heteroepitaxial growth of semiconductor materials.

Graphical abstract: Preparation of controllable double-selective etched porous substrate for HVPE growth of GaN crystals with excellent optical properties

Supplementary files

Article information

Article type
Paper
Submitted
08 Oct 2023
Accepted
25 Oct 2023
First published
28 Oct 2023

CrystEngComm, 2023,25, 6602-6610

Preparation of controllable double-selective etched porous substrate for HVPE growth of GaN crystals with excellent optical properties

B. Zhang, H. Hu, X. Yao, Y. Wu, Y. Shao and X. Hao, CrystEngComm, 2023, 25, 6602 DOI: 10.1039/D3CE00989K

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