Issue 44, 2023

High-Tc Fe-based ferroelectric compound with large spontaneous polarization and narrow bandgap

Abstract

Organic–inorganic hybrid perovskite halide ferroelectric semiconductor materials have received great attention due to their various properties and wide applications. However, currently, most of the reported ferroelectric semiconductor materials are lead-based, while there are a few reports on iron-based organic–inorganic hybrid semiconductor materials. In this study, we have successfully designed and synthesized a novel zero-dimensional organic–inorganic hybrid metal halide semiconductor ferroelectric material: [(CH3)3NCH2CH2CH3] FeBr4 (1), with a high-temperature phase transition point of 390 K and spontaneous polarization (Ps = 7.5 μC cm−2). The typical hysteresis loop and clear ferroelectric domain of compound 1 were obtained, which revealed the ferroelectricity of compound 1. It is worth mentioning that compound 1 showed a rare ferroelectric–ferroelectric phase transition. In addition, compound 1 has an optical bandgap of 1.88 eV and a theoretical bandgap of 1.71 eV, indicating that compound 1 is a high-quality semiconductor material. This work provides some inspiration for the research on lead-free organic–inorganic hybrid metal halide semiconductor ferroelectric materials.

Graphical abstract: High-Tc Fe-based ferroelectric compound with large spontaneous polarization and narrow bandgap

Supplementary files

Article information

Article type
Paper
Submitted
25 Jul 2023
Accepted
17 Oct 2023
First published
30 Oct 2023

New J. Chem., 2023,47, 20619-20625

High-Tc Fe-based ferroelectric compound with large spontaneous polarization and narrow bandgap

Y. Tan, T. Ying, X. Fan, Y. Huang, M. Wan, F. Wang, Q. Li and M. Wang, New J. Chem., 2023, 47, 20619 DOI: 10.1039/D3NJ03461E

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