Correction: Synaptic plasticity and non-volatile memory characteristics in TiN-nanocrystal-embedded 3D vertical memristor-based synapses for neuromorphic systems

Seyeong Yang; Taegyun Kim; Sunghun Kim; Daewon Chung; Tae-Hyeon Kim; Jung Kyu Lee; Sungjoon Kim; Muhammad Ismail; Chandreswar Mahata; Sungjun Kim; Seongjae Cho

doi:10.1039/D3NR90165C

Correction: Synaptic plasticity and non-volatile memory characteristics in TiN-nanocrystal-embedded 3D vertical memristor-based synapses for neuromorphic systems

Seyeong Yang,^a Taegyun Kim,^a Sunghun Kim,^a Daewon Chung,^a Tae-Hyeon Kim,^d Jung Kyu Lee,^a Sungjoon Kim,^b Muhammad Ismail,^a Chandreswar Mahata,^a Sungjun Kim*^a and Seongjae Cho*^c

Author affiliations

* Corresponding authors

^a Division of Electronics and Electrical Engineering, Dongguk University, Seoul 04620, South Korea
E-mail: sungjun@dongguk.edu

^b Department of Electrical and Computer Engineering, Seoul National University, Seoul 08826, South Korea

^c Department of Electronic and Electrical Engineering, Ewha Womans University, Seoul 03760, South Korea
E-mail: felixcho@ewha.ac.kr

^d School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA, USA

Abstract

Correction for ‘Synaptic plasticity and non-volatile memory characteristics in TiN-nanocrystal-embedded 3D vertical memristor-based synapses for neuromorphic systems’ by Seyeong Yang et al., Nanoscale, 2023, https://doi.org/10.1039/D3NR01930F.

Nanoscale

Correction: Synaptic plasticity and non-volatile memory characteristics in TiN-nanocrystal-embedded 3D vertical memristor-based synapses for neuromorphic systems

Abstract

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Correction: Synaptic plasticity and non-volatile memory characteristics in TiN-nanocrystal-embedded 3D vertical memristor-based synapses for neuromorphic systems

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