Correction: Self-limiting stoichiometry in SnSe thin films

Jonathan R. Chin; Marshall B. Frye; Derrick Shao-Heng Liu; Maria Hilse; Ian C. Graham; Jeffrey Shallenberger; Ke Wang; Roman Engel-Herbert; Mengyi Wang; Yun Kyung Shin; Nadire Nayir; Adri C. T. van Duin; Lauren M. Garten

doi:10.1039/D3NR90187D

Correction: Self-limiting stoichiometry in SnSe thin films

Jonathan R. Chin,^a Marshall B. Frye,^a Derrick Shao-Heng Liu,^b Maria Hilse,^c Ian C. Graham,^a Jeffrey Shallenberger,^c Ke Wang,^c Roman Engel-Herbert,^d Mengyi Wang,^b Yun Kyung Shin,^e Nadire Nayir,^ef Adri C. T. van Duin^e and Lauren M. Garten*^a

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* Corresponding authors

^a The School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332-0245, USA
E-mail: lauren.garten@mse.gatech.edu

^b Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, USA

^c Materials Research Institute, The Pennsylvania State University, University Park, Pennsylvania 16802, USA

^d Paul-Drude Institut für Festkörperelektronik Berlin, Leibniz-Institut im Forschungsverbund Berlin eV., Berlin 10117, Germany

^e Department of Mechanical Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, USA

^f Physics Department, Karamanoglu Mehmetbey University, Karaman, Turkey

Abstract

Correction for ‘Self-limiting stoichiometry in SnSe thin films’ by Jonathan R. Chin et al., Nanoscale, 2023, 15, 9973–9984, https://doi.org/10.1039/D3NR00645J.

Nanoscale

Correction: Self-limiting stoichiometry in SnSe thin films

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