Issue 1, 2023

Induced abundant oxygen vacancies in Sc2VO5−δ/g-C3N4 heterojunctions for enhanced photocatalytic degradation of levofloxacin

Abstract

Sc2VO5−δ/g-C3N4 heterojunctions (SVCs) with abundant oxygen vacancies (OVs) were synthesized by ultrasonic exfoliation combined with the thermal etching method. The structures, OVs and spatial separation of the photogenerated carriers were systematically characterized. The results manifested that the SVCs were successfully constructed via the strong interaction between g-C3N4 (CN) and Sc2VO5−δ (SV). The SVCs possessed a higher concentration of OVs than that of pristine CN and SV. The formation of the SVC heterostructures and the optimization of the OVs were the two major factors to accelerate the separation of the charge carriers and finally to improve the photocatalysis performance. The as-prepared 10%SVC (containing 10 wt% of SV) catalyst exhibited the highest OV concentration and the best photocatalytic performance. The levofloxacin (LVX) photodegradation activity showed a positive correlation with the OV concentration. The photocatalytic degradation efficiencies were 89.1, 98.8 and 99.0% on 10%SVC for LVX, methylene blue (MB) and rhodamine B (RhB), respectively. These photodegradation processes followed the pseudo first order kinetic equation. The apparent rate constant (kapp) of LVX degradation on 10%SVC was 11.0 and 7.5 times that of CN and SV. The h+, ˙OH and ˙O2 were the major reactive species in the photodegradation process.

Graphical abstract: Induced abundant oxygen vacancies in Sc2VO5−δ/g-C3N4 heterojunctions for enhanced photocatalytic degradation of levofloxacin

Supplementary files

Article information

Article type
Paper
Submitted
24 Nov 2022
Accepted
19 Dec 2022
First published
23 Dec 2022
This article is Open Access
Creative Commons BY-NC license

RSC Adv., 2023,13, 688-700

Induced abundant oxygen vacancies in Sc2VO5−δ/g-C3N4 heterojunctions for enhanced photocatalytic degradation of levofloxacin

J. Feng, L. Zu, H. Yang, Y. Zheng, Z. Chen, W. Song, R. Zhao, L. Wang, X. Ran and B. Xiao, RSC Adv., 2023, 13, 688 DOI: 10.1039/D2RA07484B

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