Polarization enhanced photoresponse of InSe via 2D ferroelectric CuCrP2S6

Abstract

Two-dimensional CuCrP₂S₆ possesses significant potential for low-power non-volatile devices owing to its multiferroic properties. Nonetheless, comprehensive investigations regarding the modulation of CuCrP₂S₆ polarization for enhancing semiconductor photodetection capabilities and its potential applications in ferroelectric non-volatile devices are still relatively scarce. In this study, we present a novel, non-volatile, tunable photodetector engineered through the integration of a ferroelectric heterostructure comprising CuCrP₂S₆ and InSe. Our findings reveal that distinct ferroelectric polarization states of CuCrP₂S₆ exert varying modulation effects on the InSe photodetection performance. Notably, optimized results give a responsivity of 1839 A W⁻¹ and a detectivity of 1.9 × 10¹² Jones at a 300 nm wavelength, featuring a substantial 20.7-fold difference in responsivity between the two polarization states. This investigation underscores the immense potential of CuCrP₂S₆ in the development of non-volatile, multi-state optoelectronic devices.