Intrinsically dominated anomalous Hall effect in pulsed laser deposited epitaxial Co2MnGe ferromagnetic full Heusler alloy thin films

Abstract

Large size epitaxial thin films of ferromagnetic Co₂MnGe full Heusler alloy are grown over MgO(100) substrate by using pulsed laser deposition technique under optimized growth conditions. Metallic behavior is confirmed from the longitudinal resistivity-temperature data, while a minimum in the resistivity at ∼25 K is attributed to the disorder-induced weak localization effect. Importantly, a dominating intrinsic anomalous Hall conductivity value of ∼21 S cm⁻¹ against an overall anomalous Hall conductivity value of ∼36 S cm⁻¹ at the room temperature has been estimated for the epitaxial Co₂MnGe film. The dominating intrinsic mechanism is also evident from the near temperature-independent behavior of the overall anomalous Hall conductivity.