Issue 39, 2023

Solution-processed amorphous zinc indium tin oxide thin-film transistors with high stability under AC stress

Abstract

The stable operation behavior of thin-film transistors (TFTs) in pixel circuits under AC stress is crucial for high-performance active-matrix displays. However, conventional amorphous indium–gallium–zinc oxide (a-IGZO) TFTs exhibit a reduction in on-current (Ion) and the hump phenomenon of electrical characteristics when exposed to dynamic AC drain stress. In contrast, amorphous zinc–indium–tin oxide (a-ZITO) TFTs exhibit superior resistance to acceptor-like trap generation caused by impact ionization. The tetrahedral Zn site and strong chemical bonding of the Sn site in the a-ZITO network enhance defect tolerance against hot carriers, resulting in high stability against AC stress. This has been demonstrated through AC stress tests and capacitance–voltage (CV) characterization for a-ZITOs with various Zn : In : Sn ratios of 2 : 1 : 1, 4 : 1 : 1, and 6 : 1 : 1. Compared to the Ion degradation rate of 69% for a-IGZO TFTs, the value significantly decreased to 15% by employing optimized a-ZITO with a synergistic composition ratio of 6 : 1 : 1. Overall, a-ZITO (6 : 1 : 1) TFTs exhibited high AC stress stability and a low threshold voltage shift of 0.4 V while maintaining high carrier mobilities of 10–11 cm2 V−1 s−1 with consistent performance regardless of the fabrication batch.

Graphical abstract: Solution-processed amorphous zinc indium tin oxide thin-film transistors with high stability under AC stress

Supplementary files

Article information

Article type
Paper
Submitted
12 Jul 2023
Accepted
31 Aug 2023
First published
31 Aug 2023

J. Mater. Chem. C, 2023,11, 13395-13402

Solution-processed amorphous zinc indium tin oxide thin-film transistors with high stability under AC stress

D. Ho, H. Jeong, H. Park, S. K. Park, M. Kim and C. Kim, J. Mater. Chem. C, 2023, 11, 13395 DOI: 10.1039/D3TC02439C

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