Rapid growth of SiC single crystals using CVD-SiC block sources via a sublimation method

Abstract

By adopting CVD-SiC recycled blocks as a SiC source, SiC crystals were successfully grown with a high growth rate of 1.46 mm h⁻¹via the PVT method. The micropipe density and the dislocation density of the grown crystal suggested good crystal quality despite its high growth rate.