Gated spin manipulation in a bipolar Rashba semiconductor: a Janus TeSSe monolayer

Abstract

It is very important to realize the electronically controlled spin direction for spintronic devices. Inspired by the bipolar Rashba semiconductor (BRS) concept recently proposed by Yang's group (X. Fu, et al. J. Phys. Chem. Lett., 2023, 14(50), 11292–11297), which presented a novel solution for spin precession manipulation using a BRS, through first-principles calculations, we confirm that Janus TeSSe is a BRS. Therefore, in a spin field-effect transistor based on BRS Janus TeSSe, the spin texture direction can be electronically controlled by applying a gate voltage. We describe in detail the special opposite spin texture of Janus TeSSe, and how the gate voltage regulates the spin direction of the physical mechanism. Furthermore, the regulation of the energy band and Rashba coefficient by charge doping, external electric field, and strain engineering is studied. In summary, we propose a new Janus BRS TeSSe monolayer capable of achieving electrical control of rotation through electrical gating, which enriches the family of two-dimensional BRS materials and inspires experimental researchers to conduct studies related to spin manipulation.