Issue 19, 2024

Regulation of deep and shallow hole/electron trap states and charge conducting behaviors of dielectric tribo-materials for maximizing retained charges

Abstract

Recently, ultra-fast and high-efficiency charge self-injection technology (UH-CSI) utilizing the charge excitation strategy has effectively increased the charge density of triboelectric nanogenerators (TENGs). However, the air breakdown effect caused by excessive injection charge and the charge de-trapping effect resulting from the shallow trap of the polymer leads to severe charge dissipation. Herein, we utilize the HUSCI strategy to quantify the ability of 30 conventional tribo-materials to trap and de-trap positive/negative charges and reveal that the polymer's group composition influences trap states. Specifically, the density and proportion of deep and shallow hole/electron trap states determine the storage and dissipation of injected charges. Moreover, we identify three paths for dynamic charge dissipation and propose optimizing trap distribution and constructing a charge transport and blocking layer to suppress dissipation. Finally, the modified P(VDF-TrFE) film, with reasonable doping of SiO2 and MoS2, achieves a high retained charge density of 3.88 mC m−2, and the charge dissipation rate is reduced by 50%, setting a new record for material modification. Surprisingly, the high trap state density of PVDF results in an ultra-high injected charge density of 26.2 mC m−2. This study provides a fundamental methodology for quantifying charge trapping in dielectric materials and suppressing charge de-trapping.

Graphical abstract: Regulation of deep and shallow hole/electron trap states and charge conducting behaviors of dielectric tribo-materials for maximizing retained charges

Supplementary files

Article information

Article type
Paper
Submitted
09 Jul 2024
Accepted
22 Aug 2024
First published
28 Aug 2024

Energy Environ. Sci., 2024,17, 7382-7393

Regulation of deep and shallow hole/electron trap states and charge conducting behaviors of dielectric tribo-materials for maximizing retained charges

J. Wang, S. Xu, G. Li, H. Wu, K. Li, A. Chen, Q. Zhao, S. Fu, C. Shan, Y. Xi and C. Hu, Energy Environ. Sci., 2024, 17, 7382 DOI: 10.1039/D4EE03008G

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