Issue 3, 2024

A metallated graphene oxide foam with a carbon nanotube shell for an enhanced capacitance device

Abstract

Single and multimetallic interfacial sites are promising for enhancing current density, power density, and capacitance. Graphene-based composites with a three-dimensional (3D) foam architecture and metal incorporation are prospective materials to investigate the migration of electrons along the interfaces of nanotube architecture. We present a fabrication strategy for metallated reduced graphene oxide foam (M-rGO foam) grown as a single piece using a graphene suspension and multi-walled carbon nanotube (MWCNT)-like tubular structure-containing trimetallic (Ni, Co, and Zn) zeolitic imidazolate framework derived NC at 700 °C (C-ZIF-700-NC) as the parent material with rich metal-doped interfaces. During the formation of the composite between graphene oxide and M-ZIF-700 NC, L-ascorbic acid acts as a reducing agent in an aqueous medium at 75 °C for 8 h. The M-rGO foam architecture incorporates metal nanoparticles, such as cobalt, nickel, and zinc, for capacitance enhancement because of possible ionic conductivity in the hierarchical metallated interface architecture. The M-rGO foam delivers an outstanding gravimetric capacitance of 1013.47 F g−1 at a scan rate of 5 mV s−1 and retains an extraordinary gravimetric capacitance of 450.81 F g−1 even at a higher scan rate of 100 mV s−1 with high-rate capability. It has a prolonged capacitance retention of 94% at 10 000 cycles. The symmetric supercapacitor device (SSD) of the M-rGO foam achieved an ultrahigh energy density of 44.93 Wh kg−1 at a power density of 749.9 W kg−1.

Graphical abstract: A metallated graphene oxide foam with a carbon nanotube shell for an enhanced capacitance device

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Article information

Article type
Paper
Submitted
20 Nov 2023
Accepted
15 Dec 2023
First published
18 Dec 2023
This article is Open Access
Creative Commons BY license

RSC Appl. Interfaces, 2024,1, 483-491

A metallated graphene oxide foam with a carbon nanotube shell for an enhanced capacitance device

R. Patil, L. Pradhan, B. M. Matsagar, R. R. Salunkhe, K. C.-W. Wu, B. K. Jena and S. Dutta, RSC Appl. Interfaces, 2024, 1, 483 DOI: 10.1039/D3LF00226H

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