Issue 12, 2024

A stochastic photo-responsive memristive neuron for an in-sensor visual system based on a restricted Boltzmann machine

Abstract

In-sensor computing has gained attention as a solution to overcome the von Neumann computing bottlenecks inherent in conventional sensory systems. This attention is due to the ability of sensor elements to directly extract meaningful information from external signals, thereby simplifying complex data. The advantage of in-sensor computing can be maximized with the sampling principle of a restricted Boltzmann machine (RBM) to extract significant features. In this study, a stochastic photo-responsive neuron is developed using a TiN/In–Ga–Zn–O/TiN optoelectronic memristor and an Ag/HfO2/Pt threshold-switching memristor, which can be configured as an input neuron in an in-sensor RBM. It demonstrates a sigmoidal switching probability depending on light intensity. The stochastic properties allow for the simultaneous exploration of various neuron states within the network, making identifying optimal features in complex images easier. Based on semi-empirical simulations, high recognition accuracies of 90.9% and 95.5% are achieved using handwritten digit and face image datasets, respectively. In addition, the in-sensor RBM effectively reconstructs abnormal face images, indicating that integrating in-sensor computing with probabilistic neural networks can lead to reliable and efficient image recognition under unpredictable real-world conditions.

Graphical abstract: A stochastic photo-responsive memristive neuron for an in-sensor visual system based on a restricted Boltzmann machine

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Article information

Article type
Communication
Submitted
21 Aug 2024
Accepted
30 Sep 2024
First published
01 Oct 2024

Nanoscale Horiz., 2024,9, 2248-2258

A stochastic photo-responsive memristive neuron for an in-sensor visual system based on a restricted Boltzmann machine

J. H. Kim, H. W. Kim, M. J. Chung, D. H. Shin, Y. R. Kim, J. Kim, Y. H. Jang, S. W. Cheong, S. H. Lee, J. Han, H. J. Park, J. Han and C. S. Hwang, Nanoscale Horiz., 2024, 9, 2248 DOI: 10.1039/D4NH00421C

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