Comment on “Improving the efficiency of a CIGS solar cell to above 31% with Sb2S3 as a new BSF: a numerical simulation approach by SCAPS-1D” by M. F. Rahman and S. Goumri-Said et al., RSC Adv., 2024, 14, 1924

Abstract

It was reported in early 2024 that a single-junction 1.1 eV bandgap copper indium gallium selenide (CIGS) solar cell can achieve actual power conversion efficiency up to 40.70%, open circuit voltage up to 1.330 V, and fill factor up to 90.55% at 300 K when the solar cell is irradiated by the air mass 1.5 global (AM1.5G) solar spectrum (M. F. Rahman et al., RSC Adv., 2024, 14, 1924–1938). These simulated solar cell performance parameters exceed the ideal detailed balance-limiting power conversion efficiency, open circuit voltage, and fill factor of a 1.1 eV bandgap single-junction solar cell.