Single-molecule non-volatile memories: an overview and future perspectives

Abstract

Single-molecule non-volatile memories can be designed as high-density memories and memristors. The latter, enabling real-time data processing by performing computations directly within the memory unit, holds the potential to surpass the limitations predicted by the Von Neumann architecture. This article provides an overview of the research progress on non-volatile memories associated with functional centers of single molecules. Single-molecule devices with bistable or even multistable switching characteristics have been used to achieve storage and memory resistance functions. This review aims to summarize strategies for achieving non-volatile resistance switching using single-molecule devices, including the design of functional molecules and device construction. It uncovers the physical and chemical mechanisms by which single-molecule non-volatile memories realize multistable conductance states, such as conformational transformations, tautomerisms, intramolecular motions, spin changes, and charge changes. Furthermore, it discusses the potential developments and challenges of single-molecule non-volatile memories, including the diversity in device construction, the challenges of device integration, and the possibility of achieving the high performance, while proposing potential solutions. The objective of this review is to provide readers with fresh research insights and avenues for further exploration, thereby introducing new perspectives in the field of single-molecule non-volatile memories.