Issue 14, 2024

In situ growth of Cs3Bi2Br9 on ultrathin BiVO4 nanosheets to fabricate heterojunction intimate interfaces for enhancing photocatalytic activity

Abstract

Lead-free halide perovskites have emerged as a potential green photocatalyst with wide-ranging applications in environmental remediation and energy conversion. However, undesirable charge recombination and insufficient visible light absorption of pure halide perovskites would limit the photocatalytic performance. Herein, an intriguing perovskite-based Cs3Bi2Br9/BiVO4 S-scheme heterojunction was fabricated for the first time by in situ growth of Cs3Bi2Br9 on BiVO4 nanosheets (BiVO4 NSs). The degradation results of Sudan red III under visible light showed that the optimized 5% Cs3Bi2Br9/BiVO4 achieved a 99.2% degradation rate within 40 min, which was ∼2.37 times higher than pure Cs3Bi2Br9 and ∼106 times higher than BiVO4, respectively. The effective removal of organic dyes is mainly attributed to the extended visible light absorption range, the charge transfer accelerated by the built-in electric field, and the abundance of reactive radicals (˙O2) after the formation of the intimate interface of the Cs3Bi2Br9/BiVO4 S-scheme heterojunction. In addition, six consecutive cycles of photocatalytic experiments and stability tests demonstrated excellent photocatalytic properties of Cs3Bi2Br9/BiVO4. This work provides useful guidance for the development and construction of efficient lead-free perovskite-based heterojunction photocatalysts.

Graphical abstract: In situ growth of Cs3Bi2Br9 on ultrathin BiVO4 nanosheets to fabricate heterojunction intimate interfaces for enhancing photocatalytic activity

Supplementary files

Article information

Article type
Paper
Submitted
16 Nov 2023
Accepted
01 Mar 2024
First published
04 Mar 2024

J. Mater. Chem. C, 2024,12, 5230-5238

In situ growth of Cs3Bi2Br9 on ultrathin BiVO4 nanosheets to fabricate heterojunction intimate interfaces for enhancing photocatalytic activity

Y. Gao, Y. Guo and G. Zhao, J. Mater. Chem. C, 2024, 12, 5230 DOI: 10.1039/D3TC04216B

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