Issue 15, 2024

Designing buried-gate InGaZnO transistors for high-yield and reliable switching characteristics

Abstract

The indium–gallium–zinc-oxide (IGZO) transistor has consistently encountered reliability issues and has intrinsic material limitations that limit its electrical performance. In this study, we demonstrate a device concept containing a buried back gate in the IGZO transistor that offers a practical solution, enhancing device reliability and significantly improving transistor performance. Buried-gate transistors that apply a uniform gating field effect to the effective channel region outperform control-gate transistor devices with respect to the on-current, hysteresis window, subthreshold swing, and μFE. The device yield is also substantially increased (∼81% even higher than ∼54% of the control device) by mitigating the non-uniform gating field effect arising from the protruding gate structure of the control device. Furthermore, the reduced series resistance and decreased interface trap density of the buried-gate transistor substantiate the geometrical optimization of the original transistor device with intrinsically bending stacked-layers (IGZO/A2O3). These results provide a feasible approach for enhancing the reliability and electrical properties of oxide thin film transistors, potentially paving a way toward the development of a highly reliable transistor for commercial gadgets.

Graphical abstract: Designing buried-gate InGaZnO transistors for high-yield and reliable switching characteristics

Supplementary files

Article information

Article type
Paper
Submitted
10 Dec 2023
Accepted
19 Mar 2024
First published
25 Mar 2024

J. Mater. Chem. C, 2024,12, 5347-5354

Designing buried-gate InGaZnO transistors for high-yield and reliable switching characteristics

D. H. Kim, S. Oh, O. Kwon, S. Jeong, H. Y. Seo, E. Cho, M. J. Kim, W. Seo, J. Kwon, Y. Kim, W. Park and B. Cho, J. Mater. Chem. C, 2024, 12, 5347 DOI: 10.1039/D3TC04531E

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