Issue 38, 2024

Diamond photo-electric detectors with introduced silicon-vacancy color centers

Abstract

Color centers in diamond are promising candidates for quantum sensing in photo-luminescent or photo-electric modes. The photoinduced charge carrier separation in nitrogen-vacancy (NV) centers makes diamond an excellent visible photodetector. To date, the effect of introducing silicon-vacancy (SiV) color centers on the photo-electrical and photo-luminescent properties of diamond remains unclear. To address this issue, high-quality silicon-doped single crystal diamond (Si-SCD) photodetectors were prepared by microwave plasma chemical vapor deposition (MPCVD). It is found that an extremely low dark current of several picoamperes can be achieved with an oxygen-terminated surface. In addition, although the introduction of SiV centers enhances the device's absorption of near-ultraviolet/visible (NUV/Vis) illumination, it has little impact on the solar blind detection performance, exhibiting a responsivity of 36.2 mA W−1 and detectivity of 2.10 × 1012 jones. Meanwhile, the Si-doped detector also exhibits 102 to 103 times higher responses to NUV/Vis signals and a faster cut-off speed. Moreover, a SiV PL enhancement of 50% was achieved with external electrical bias, demonstrating a higher electric pumping efficiency compared with polycrystalline diamond devices.

Graphical abstract: Diamond photo-electric detectors with introduced silicon-vacancy color centers

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Article information

Article type
Paper
Submitted
06 Jun 2024
Accepted
03 Aug 2024
First published
07 Aug 2024
This article is Open Access
Creative Commons BY-NC license

J. Mater. Chem. C, 2024,12, 15483-15490

Diamond photo-electric detectors with introduced silicon-vacancy color centers

X. Guo, B. Yang, X. Zhang, J. Lu, M. Huang, N. Huang, L. Liu and X. Jiang, J. Mater. Chem. C, 2024, 12, 15483 DOI: 10.1039/D4TC02335H

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