Issue 46, 2024
From the journal:

Journal of Materials Chemistry C

Correction: Effective strategies for current boosting in a mesa-shaped In–Ga–Zn–O vertical-channel thin-film transistor with a short-channel length of 40 nm

Chae-Eun Oh,a   Young-Ha Kwon,b   Nak-Jin Seong,b   Kyu-Jeong Choib  and  Sung-Min Yoon*a  

* Corresponding authors

a Department of Advanced Materials Engineering for Information and Electronics, Kyung Hee University, Yongin, Gyeonggi-do 17104, Korea
E-mail: sungmin@khu.ac.kr

b NCD Co., Ltd, Daejeon 34015, Korea

Abstract

Correction for ‘Effective strategies for current boosting in a mesa-shaped In–Ga–Zn–O vertical-channel thin-film transistor with a short-channel length of 40 nm’ by Chae-Eun Oh et al., J. Mater. Chem. C, 2024, 12, 14455–14468, https://doi.org/10.1039/D4TC02779E.

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Article information

DOI
https://doi.org/10.1039/D4TC90191F
Article type
Correction
Submitted
08 Nov 2024
Accepted
08 Nov 2024
First published
19 Nov 2024
This article is Open Access
Creative Commons BY license

J. Mater. Chem. C, 2024,12, 18934-18935

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Correction: Effective strategies for current boosting in a mesa-shaped In–Ga–Zn–O vertical-channel thin-film transistor with a short-channel length of 40 nm

C. Oh, Y. Kwon, N. Seong, K. Choi and S. Yoon, J. Mater. Chem. C, 2024, 12, 18934 DOI: 10.1039/D4TC90191F

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