Issue 1, 2025

Mechanisms of interlayer friction in low-dimensional homogeneous thin-wall shell structures and its strain effect

Abstract

Due to the multi-factor coupling effect, the rule of interlayer friction in low-dimensional homogeneous thin-wall shell structures is still unclear. Double walled carbon nanotubes (DWCNTs) having a typical low-dimensional homogeneous thin-wall shell structure are selected for this study. The interlayer friction of numerous chiral DWCNTs is investigated using molecular dynamics simulations to systematically analyze and understand the coupling mechanisms of various factors in interlayer friction. To eliminate the influence of the edge effect, a high-speed pure rotation model is used. The results demonstrate that DWCNTs with varying mismatch angle, interlayer distance, and interfacial radius exhibit distinct interlayer frictions and strain effects, due to the differences in interlayer interaction, atomic vibrational amplitudes, and lattice periods. Theoretical analysis is conducted on the interlayer friction and its strain effect based on the theoretical model. Based on phonon spectrum analysis, the vibrational modes and energy dissipation of DWCNTs with different chiral combinations under various strains are demonstrated. Based on the analysis, physical insight into the variation in friction forces is provided. The findings of this work deepen the understanding of the interlayer friction and strain mechanism and provide a theoretical basis for further exploitation of the strain effect to realize the regulation of nanoelectromechanical devices.

Graphical abstract: Mechanisms of interlayer friction in low-dimensional homogeneous thin-wall shell structures and its strain effect

Supplementary files

Article information

Article type
Paper
Submitted
25 Aug 2024
Accepted
18 Nov 2024
First published
25 Nov 2024

Phys. Chem. Chem. Phys., 2025,27, 436-450

Mechanisms of interlayer friction in low-dimensional homogeneous thin-wall shell structures and its strain effect

Y. Cai, J. Huang, S. Gan, Y. Liang, K. Wang and Q. Han, Phys. Chem. Chem. Phys., 2025, 27, 436 DOI: 10.1039/D4CP03320E

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