Impact of Ce doping on the optoelectronic and structural properties of a CsPbIBr2 perovskite solar cell

Abstract

This paper provides a detailed analysis of pure CsPbIBr2 and 4% Ce-doped CsPbIBr2 perovskite films, emphasizing structural, optical and photovoltaic properties. X-ray diffraction confirms a predominant cubic perovskite phase in both samples, with Ce doping leading to increased crystal size (21 nm to 32 nm). UV-Vis Spectroscopy reveals a reduce bandgap energy (2.2 eV to 2.1 eV) with Ce doping. Dielectric constant analysis indicates enhanced permittivity in Ce-doped samples, crucial for solar-cell light trapping. Energy band structure analysis demonstrates improved photovoltaic cell performance with Ce doping, yielding higher open-circuit voltage, short-circuit current, and efficiency (9.71%) compared to pure CsPbIBr2 (8.02%). Ce doping mitigates electron-hole recombination, enhancing cell stability, electron affinity, and power output. This research underscores the potential for cost-effective, efficient, and stable CsPbIBr2 perovskite solar cells.