Issue 4, 2025

A perfect ultra-wideband solar absorber with a multilayer stacked structure of Ti–SiO2–GaAs: structure and outstanding characteristics

Abstract

In this paper, we introduce an entirely new solar absorber design—a multi-layer periodic stacked structure. Through coupling effects, this design has perfect ultra-wideband absorption characteristics. The absorber structure is composed of four absorption units with varying cycle lengths, which are cyclically stacked on the surface of the refractory metal Cr. Each cycle encompasses three-layer nanosheets of Ti–SiO2–GaAs. We verify through finite difference time domain method (FDTD) simulations that the absorber achieves an absorption efficiency of 97.8% within the wavelength range of 280 nm to 3000 nm, with an average efficiency of 96.6% under the AM1.5 standard solar spectrum. The absorber can achieve such a remarkable absorption effect because of surface plasmon resonance (SPR) and Fabry–Pérot resonance effects. At 1500 K, this structure exhibits a thermal radiation efficiency of up to 97.83%. Furthermore, the design is not affected by polarization and it is less affected by the incident angle of the light source. These absorption spectra remain consistent regardless of whether it is in the TE or TM mode. Even when the angle of incidence is increased to 60 degrees, the absorption efficiency remains high. Its unique structure and excellent performance characteristics provide higher solar energy efficiency. These outstanding features enable solar absorbers to have broad application potential in improving solar energy efficiency.

Graphical abstract: A perfect ultra-wideband solar absorber with a multilayer stacked structure of Ti–SiO2–GaAs: structure and outstanding characteristics

Article information

Article type
Paper
Submitted
15 Sep 2024
Accepted
18 Nov 2024
First published
10 Dec 2024

Dalton Trans., 2025,54, 1574-1582

A perfect ultra-wideband solar absorber with a multilayer stacked structure of Ti–SiO2–GaAs: structure and outstanding characteristics

K. An, C. Ma, T. Sun, Q. Song, L. Bian, Z. Yi, J. Zhang, C. Tang, P. Wu and Q. Zeng, Dalton Trans., 2025, 54, 1574 DOI: 10.1039/D4DT02633K

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