Improved stability and electronic homogeneity in perovskite solar cells via a nanoengineered buried oxide interlayer

Abstract

Self-assembled monolayers (SAMs) are a popular choice for achieving high-efficiency perovskite solar cells (PSCs). However, the incomplete wetting of the perovskite on (4-(3,6-dimethyl-9H-carbazol-9-yl)butyl)phosphonic acid (Me-4PACz) SAMs in PSCs has proven to be a challenge. Recently, the use of surface modifiers such as alumina nanoparticles and poly(9,9-bis(3′-(N,N-dimethyl)-N-ethylammonium-propyl-2,7-fluorene)-alt-2,7-(9,9-dioctylfluorene))dibromide (PFN–Br) has been demonstrated to eliminate this bottleneck. However, the influence of these surface modifiers on device stability has not been reported. Here, we studied the influence of alumina nanoparticles and PFN–Br on Me-4PACz device stability when stressed under ISOS-D-2I and ISOS-D-2 conditions (at 65 °C). The use of alumina nanoparticles leads to efficient scavenging of iodine, improved bulk electrical and surface electronic homogeneity in fresh films, which is preserved even when the films are degraded, and the formation of 2D perovskites, which act as a barrier against moisture induced degradation. In comparison, perovskites based on PFN–Br show a distinct lack of similar characteristics for fresh and degraded samples. This allows the realisation of alumina modified Me-4PACz based PSCs with a tenfold improved T80 lifetime of 1530 h under ISOS-D-2 conditions compared to the PFN–Br based device stack. Our study uncovers a new approach towards enhancing PSC stability, which could potentially be applied under more strenuous ISOS test conditions to further improve device stability.