Interface Magnetism in Vanadium-doped MoS2/Graphene Heterostructures

Abstract

Magnetism in two-dimensional materials is of great importance in discovering new physical phenomena and developing new devices at the nanoscale. In this paper, first principles simulations are used to calculate the electronic and magnetic properties of heterostructures composed of Graphene and MoS2 considering the influence of point defects and Vanadium doping. It is found that the concentration of the dopants and the types of defects can result in induced magnetic moments leading to ferromagnetically polarized systems with sharp interfaces. This provides a framework for interpreting the experimental observations of enhanced ferromagnetism in both MoS2/Graphene and V-doped MoS2/Graphene heterostructures. The computed electronic and spin polarizations give a microscopic understanding of the origin of ferromagnetism in these systems and illustrate how doping and defect engineering can lead to targeted property tunability. Our work has demonstrated that through defects engineering, ferromagnetism can be achieved in V-doped MoS2/Graphene heterostructures, providing a potential way to induce magnetization in other TMDC/Graphene materials and opening new opportunities for their applications in nano-spintronics.