Advances in resistive switching memory: comprehensive insights into ECM mechanisms through TEM observations and analysis

Abstract

The information age requires improved devices, especially performance and output, due to data processing, power consumption, flexibility, multifunctionality, cost efficiency, and fabrication technologies. Examining resistive switching properties indicated that the conductive filament mechanism and the movement of ions from dielectric layers or electrodes play a crucial role in facilitating resistive switching. Despite extensive studies employing various materials to clarify the resistance switching in memory devices, the fundamental mechanisms still need to be more adequately understood. In ECM, metal cations move from a top electrode that shows electrochemical activity, creating conductive metal filaments. The complex nature of ion migration at the nanoscale and the associated redox reaction in resistive switching require a thorough understanding through transmission electron microscopy (TEM). In situ TEM enables the real-time observation of resistive switching dynamics, highlighting the limitations of static ex situ TEM. The observation of filament formation via TEM facilitates atomic-resolution investigations into the real-time evolution of nanostructures within resistive switching memory systems. Understanding resistive switching behavior may improve the performance and reliability of memory devices. This assessment can be gained from applying electrodes featuring resistive switching material systems for ECM, which aim to advance the development of universal nonvolatile memory devices.