Layer-controlled continuous MoS2 growth using a spin-coatable metal precursor buffer

Abstract

Continuous large-area MoS2 growth holds significant potential for next-generation optoelectronic applications, yet achieving it efficiently and reproducibly with the conventional chemical vapor deposition (CVD) process remains a challenge due to inconsistent precursor adsorption and non-uniform nucleation. In this study, we developed a pH-optimized metal precursor buffer that enables uniform spin-coating and facilitates continuous MoS2 growth. Sodium cholate (SC) acts as both a dispersant and a buffer, transforming molybdenum oxide into a dispersion-stable sodium molybdate (Na2MoO4)/SC complex. This complex forms a stable, uniformly spin-coatable dispersion at pH = 5.3, allowing it to form hydrogen bonds with the SiO2/Si substrate. Additionally, increasing the complex concentration enhances precursor adsorption, enabling controlled MoS2 layer formation via CVD. Using this approach, we successfully fabricated continuous, centimeter-scale MoS2 films in varying layer numbers. Real-time observation reveals the growth kinetics of the continuous MoS2 film in terms of contrast value, according to the reaction time and temperature, indicating that the growth can occur at temperatures as low as 500 °C. This stable, scalable, and reproducible spin-coating technique, utilizing a metal precursor buffer, offers a robust pathway for producing large-area transition metal chalcogenide structures, advancing the development of 2D material-based applications.

Graphical abstract: Layer-controlled continuous MoS2 growth using a spin-coatable metal precursor buffer

Supplementary files

Article information

Article type
Paper
Submitted
22 Mar 2025
Accepted
15 May 2025
First published
21 May 2025
This article is Open Access
Creative Commons BY-NC license

Nanoscale, 2025, Advance Article

Layer-controlled continuous MoS2 growth using a spin-coatable metal precursor buffer

D. H. Kim, J. Seo, Y. Kang, B. Lee and S. Ju, Nanoscale, 2025, Advance Article , DOI: 10.1039/D5NR01193K

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