Multifunctional applications of 2D anti-ambipolar transistors: frequency doubling and multi-valued inverter design

Abstract

The rapid growth of information drives the need for highly integrated, low-power devices, making novel materials and architectures essential. In this study, a complementary circuit is proposed, consisting of P-type WSe₂ and N-type MoTe₂ field-effect transistors (FETs), which exhibit a rectification ratio of 10². Compared to traditional frequency multipliers, this circuit design not only functions as a frequency multiplier but also operates as a ternary inverter. Compared to conventional CMOS-based designs that interconnect two transistors to achieve multifunctionality, this circuit reduces the required number of components by half. Additionally, while traditional single devices have limited functionality, this circuit offers a richer range of applications. This circuit design functions both as a frequency multiplier and a ternary inverter. By integrating a low operating voltage of 0.7 V with the circuit design, it achieves frequency multiplication up to 3 MHz, surpassing the operating frequencies of traditional frequency multipliers based on 2D material heterojunctions, demonstrating a significant frequency advantage. Furthermore, the operating voltage of 0.7 V is lower than the 1 V or 5 V used in previous studies. Additionally, the circuit supports ternary logic, representing three logic states: “1”, “1/2”, and “0”, enabling the representation of more logic values with fewer devices. Overall, this design provides an innovative and efficient solution for multifunctional electronic devices based on a compact monolithic structure.