Issue 3, 2025, Issue in Progress

First-principles predictions of two-dimensional Ce-based ferromagnetic semiconductors: CeF2 and CeFCl monolayers

Abstract

Two-dimensional (2D) ferromagnetic (FM) semiconductors hold great promise for the next generation spintronics devices. By performing density functional theory first-principles calculations, both CeF2 and CeFCl monolayers are studied, our calculation results show that CeF2 is a FM semiconductor with sizable magneto-crystalline anisotropy energy (MAE) and high Curie temperature (290 K), but a smaller band gap and thermal instability indicate that it is not applicable at higher temperature. Its isoelectronic analogue, the CeFCl monolayer, is a bipolar FM semiconductor, its dynamics, elastic, and thermal stability are confirmed, our results demonstrate promising applications of the CeFCl monolayer for next-generation spintronic devices owing to its high Curie temperature (200 K), stable semiconducting features, and stability. Under biaxial strain from −5% to 5%, the CeFCl monolayer is a semiconductor with sizable MAE, its Curie temperature can increase to 240 K, the easy magnetization axes for CeFCl monolayer are still along the out-of-plane directions because the couplings between Cefy(3x2y2) and fx(x2–3y2) orbitals in the different spin channels contribute most to the MAE according to second-order perturbation theory.

Graphical abstract: First-principles predictions of two-dimensional Ce-based ferromagnetic semiconductors: CeF2 and CeFCl monolayers

Supplementary files

Article information

Article type
Paper
Submitted
18 Sep 2024
Accepted
10 Jan 2025
First published
23 Jan 2025
This article is Open Access
Creative Commons BY license

RSC Adv., 2025,15, 2163-2174

First-principles predictions of two-dimensional Ce-based ferromagnetic semiconductors: CeF2 and CeFCl monolayers

Y. Hu, Y. L. Song, Y. H. Huang, S. Y. Cao and Y. Yang, RSC Adv., 2025, 15, 2163 DOI: 10.1039/D4RA06728B

This article is licensed under a Creative Commons Attribution 3.0 Unported Licence. You can use material from this article in other publications without requesting further permissions from the RSC, provided that the correct acknowledgement is given.

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