Thermal stability of hyper-doped n-type Ge and Si0.15Ge0.85 epilayers obtained by in situ doping and pulsed laser melting

Abstract

The thermal stability of hyper-doped Ge-on-Si and SiGe-on-Si films featuring carrier concentrations exceeding 5 × 10¹⁹ cm⁻³ obtained by in situ doping and pulsed laser melting has been studied. The deactivation kinetics was systematically analysed through rapid thermal annealing, reflection spectroscopy and electrical characterization. The results demonstrate that, while hyper-doped Ge films exhibit rapid deactivation at temperatures above 300 °C, SiGe offers enhanced thermal stability. Surface morphology analysis confirms the preservation of flatness after pulsed laser melting and thermal treatments, suggesting possible exploitation of these materials as substrates for further growth. These findings provide insights into optimizing hyper-doped material platforms for mid-infrared photonic devices and advanced semiconductor applications, emphasizing the trade-offs between the initial carrier concentration and the thermal resilience.