Issue 40, 2015
From the journal:

Physical Chemistry Chemical Physics

Themed issue on “Organic field-effect transistors: interfacial phenomena and electronic properties”

K. Krishnamoorthy,a   Antonio F. Facchetti,b   Wenping Huc  and  Zhenan Baod  

a CSIR-National Chemical Laboratory, Pune 411008, India

b Polyera Corporation and Northwest University, IL 60208, USA

c Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, China

d Stanford University, CA 94305-4125, USA

Abstract

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Graphical abstract: Themed issue on “Organic field-effect transistors: interfacial phenomena and electronic properties”

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Article information

DOI
https://doi.org/10.1039/C5CP90162F
Article type
Editorial
Submitted
07 Sep 2015
Accepted
07 Sep 2015
First published
28 Sep 2015

Phys. Chem. Chem. Phys., 2015,17, 26509-26511

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Themed issue on “Organic field-effect transistors: interfacial phenomena and electronic properties”

K. Krishnamoorthy, A. F. Facchetti, W. Hu and Z. Bao, Phys. Chem. Chem. Phys., 2015, 17, 26509 DOI: 10.1039/C5CP90162F

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