Issue 9, 2024

Electron beam lithography of GeTe through polymorphic phase transformation

Abstract

We report two previously undiscovered phases of GeTe including the sphalerite (c-) phase and the hexagonal (h-) phase with interlayer van der Waals gaps. A polymorphic phase transformation from rhombohedral α-GeTe to c- and h-GeTe at near room temperature is first realized via electron beam irradiation. Their underlying thermodynamics and kinetics are illustrated using the in situ heating experiments and molecular dynamics simulations. Density-functional theory calculations indicate that c-GeTe exhibits typical metallic behavior and h-GeTe is a narrow-gap semiconductor with a strong spin–orbital coupling effect. Our findings shed light on a strategy for designing GeTe-based quantum devices compromising nanopillars and heterostructures via an atomic-scale electron beam lithography technique.

Graphical abstract: Electron beam lithography of GeTe through polymorphic phase transformation

Supplementary files

Article information

Article type
Communication
Submitted
23 Jan 2024
Accepted
11 Jul 2024
First published
12 Jul 2024

Nanoscale Horiz., 2024,9, 1574-1581

Electron beam lithography of GeTe through polymorphic phase transformation

H. Zhang, M. Li, S. Mi, S. Cheng, L. Lu and Z. Chen, Nanoscale Horiz., 2024, 9, 1574 DOI: 10.1039/D4NH00035H

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