Controllable topological phase transition via ferroelectric–paraelectric switching in a ferromagnetic single-layer MIMIIGe2X6 family

Abstract

Recently, the emergence of two-dimensional (2D) multiferroic materials has opened a new perspective for exploring topological states. However, instances of tuning topological phase transitions through ferroelectric (FE) polarization in 2D ferromagnetic (FM) materials are relatively rare. Here, we found that 11 single layer (SL) materials, named the MIMIIGe2X6 family, possess both FE and FM properties. Among them, 5 SL materials exhibit controllable topological phase transition via ferroelectric–paraelectric switching. Taking the SL ReIrGe2S6 as an example, we find that the paraelectric (PE) and FE phases exhibit half-metal and magnetic semiconductor behavior, respectively. In the spin-down channel of the PE phase, a critical-type Weyl point (WP) is observed with a robust Fermi arc edge state. In contrast, the FE phase of the SL ReIrGe2S6 clearly identifies 0D corner states in both spin channels. Therefore, under the control of external fields, the SL ReIrGe2S6 undergoes a transformation from PE to FE by overcoming the energy barrier of 0.62 eV, subsequently realizing the phase transition from the Weyl semimetal to the high order topological insulator. These findings not only combine topological states with multiferroics but also pave the way for the experimental discovery of 2D tunable topological phase transition.

Graphical abstract: Controllable topological phase transition via ferroelectric–paraelectric switching in a ferromagnetic single-layer MIMIIGe2X6 family

Supplementary files

Article information

Article type
Communication
Submitted
07 Nov 2024
Accepted
16 Dec 2024
First published
24 Dec 2024

Mater. Horiz., 2025, Advance Article

Controllable topological phase transition via ferroelectric–paraelectric switching in a ferromagnetic single-layer MIMIIGe2X6 family

J. Bai, T. Yang, Z. Guo, Y. Liu, Y. Jiao, W. Meng and Z. Cheng, Mater. Horiz., 2025, Advance Article , DOI: 10.1039/D4MH01599A

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