Polymorphic phases in 2D In2Se3: fundamental properties, phase transition modulation methodologies and advanced applications

Abstract

Two-dimensional (2D) In₂Se₃, which is a multifunctional semiconductor, exhibits multiple crystallographic phases, each of which possesses distinct electronic, optical, and thermal properties. This inherent phase variability makes it a promising candidate for a wide range of applications, including memory devices, photovoltaics, and photodetectors. This review comprehensively explores the latest progress of various polymorphic phases of 2D In₂Se₃, emphasizing their unique properties, characterization methods, phase modulation strategies, and practical applications. Commencing with a rigorous examination of the structural attributes inherent in its various phases, we introduce sophisticated techniques for its characterization. Subsequently, modulation strategies, encompassing variations in temperature, application of electric fields, induced stress, and alterations in pressure, are explored, each exerting an influence on the phase transitions in 2D In₂Se₃. Finally, we highlight recent advancements and applications resulting from these phase transitions, including homoepitaxial heterophase structures, optical modulators, and phase change memory (PCM). By synthesizing insights into phase properties, modulation strategies, and potential applications, this review endeavours to provide a comprehensive understanding of the significance and prospects of In₂Se₃ in the semiconductor field.