Unraveling the Infrared Detection Properties of Bi2Te3 Depending on Thickness from Semiconductor to Metal Surface States

Abstract

Bi2Te3 emerges as a promising candidate material for the next generation of mid-wave to long-wave Infrared photodetection due to its exceptionally narrow bandgap (approximately 0.2 eV). Furthermore, its topological insulator structure is safeguarded by time-reversal symmetry, leading to electronic structures that differentiate between surface and bulk states, exhibiting distinctive optoelectronic properties. Here, this study examines the infrared detection mechanism of Bi2Te3 across various thickness aims aimed to elucidate the transport behavior and characteristics of internal carriers in Bi2Te3 under the complex interplay between the bulk state and surface states The thickness of the Bi2Te3 film was controlled by adjusting the number of pulses in the pulsed laser deposition process, and the bandgap demonstrates a dependency on thickness. The photoelectric response mechanism of Bi2Te3 at different layer thicknesses was investigated, and the charge carrier transport dynamics across layers were clarified. In a word, it offers a theoretical basis for advancing photoelectric detection devices designed to regulate Bi2Te3 at distinct thicknesses.

Supplementary files

Article information

Article type
Paper
Submitted
02 Dec 2024
Accepted
25 Jan 2025
First published
01 Feb 2025

Nanoscale, 2025, Accepted Manuscript

Unraveling the Infrared Detection Properties of Bi2Te3 Depending on Thickness from Semiconductor to Metal Surface States

Q. Kao, Y. Jia, Z. Wu, Z. Zhou, X. Ge, J. Peng, P. Martyniuk, J. Wang, C. B. Wang and F. Wang, Nanoscale, 2025, Accepted Manuscript , DOI: 10.1039/D4NR05067C

To request permission to reproduce material from this article, please go to the Copyright Clearance Center request page.

If you are an author contributing to an RSC publication, you do not need to request permission provided correct acknowledgement is given.

If you are the author of this article, you do not need to request permission to reproduce figures and diagrams provided correct acknowledgement is given. If you want to reproduce the whole article in a third-party publication (excluding your thesis/dissertation for which permission is not required) please go to the Copyright Clearance Center request page.

Read more about how to correctly acknowledge RSC content.

Social activity

Spotlight

Advertisements